What is a Schottky diode? How to detect?
What is a Schottky diode? How to detect?
Schottky diode is a low-power, high-current,ultra-high-speed semiconductor device, reverse recovery time trr can be small to a few nanoseconds,the forward conduction voltage drop is only 0.1 ~ 0.5 V,and the rectification current can reach several thousand.Figure 5-6 shows the internal structure of the Schottky diode.It takes the N-type semiconductor as the substrate,and forms the N-epitaxial layer with arsenic as the dopant.The anode ( barrier ) metal material is aluminum. Silicon dioxide ( SiO2 ) is used to eliminate the electric field in the edge area and improve the pressure value of the pipe.The doping concentration of N type substrate is 100 times higher than that of N, and has very small on-state resistance.The N + cathode layer at the lower part of the substrate is used to reduce the contact resistance of the cathode. An appropriate Schottky barrier can be formed between the substrate and the anode metal by adjusting the structural parameters.The structure of the Schottky diode is the same as that of the half-bridge,so the measuring method is the same as the half-bridge component. When measured with a digital meter, the forward internal resistance voltage is less than 0.5 V,which is lower than that of an ordinary diode.
What is a fast recovery and ultrafast recovery diode?
Fast recovery diode ( FRD ) and ultrafast recovery diode ( SRD ) are a new type of power and electronic semiconductor devices. It has the characteristics of good switching characteristics, short reverse recovery time, large forward current, and small volume. It can be used as high frequency, high current rectification circuit, in various types of switching power supply, uninterruptible power supply ( UPS ), high frequency heating, AC motor frequency control and other electronic equipment it has been widely applied.
What are the parameters of the fast recovery, ultrafast recovery diode?
the time interval of reverse time t current flowing through a zero point is converted from forward to reverse, and then reversely converted to a specified value Ir. It is an important technical parameter to measure the performance of high frequency continuation rectifier.
the reverse recovery time of the fast recovery diode is generally several hundred nanoseconds, the forward voltage drop is about 0.6 V, and the forward current is several to several thousand, the reverse peak voltage is several hundred to several thousand volts.